The increasing demand for smaller and faster complementary transistors (in which both n- and p-type devices exist on one wafer) arranged in dense arrays requires the development of new methods for the parallel fabrication of nanometer- sized transistors. However, because of limitations in current technology, the achievement of these goals is very challeng- ing. Although, some isolated examples of such devices and architectures have been demonstrated, they exhibit only moderate or limited performance, or are constructed via sophisticated multistep methodologies. In this publication Mentovich and his team suggest and demonstrate a universal method in which a new type of nanometer-sized, ambipolar, vertical molecular transistor is fabricated in parallel fashion. This centralgate molecular vertical transistor (C-Gate MolVeT) is fabricated by a combination of conventional microlithography techniques and self-assembly methods. The general fabrication methodology of the C-Gate MolVeT allows the process to be adapted for various materials and systems.
Protein used to fabricate the transistor
In this design, the nanometer channel length is determined by a protein-based self-assembled monolayer composed of bovine serum albumin protein, that is sandwiched between source and drain electrodes inside a microcavity, while a centered oxidized-metal-electrode column inside the cavity serves as the gate electrode. The results showed a transistor fully operational, that can be made with lithography thechniques, they messured the gate effect, and demonstrated the characteristic transistor curves when variating the voltage in the drain terminal.
The full article can be found in nanoletters:
Large-Scale Fabrication of 4-nm-Channel Vertical Protein-Based Ambipolar Transistors
Elad D. Mentovich, Bogdan Belgorodsky, Itsik Kalifa, Hagai Cohen, and Shachar Richter