This imaging method allows these complex and delicate structures to be easily compared to magnetic simulations, a useful step for developing technology that uses domain walls in nanowires for high density data storage and for field or current driven magnetic logic.
A typical domain wall separates two opposite regions of magnetization, making it a “180° wall”. The researchers showed that several 180° walls could be injected into a nanowire, where they either annihilated each other or they combined to form complex walls in which the magnetization rotated by up to 540°. The 360° walls were of particular interest, since their magnetic behavior is dramatically different from the 180° walls currently used in prototype memory and logic devices.
The researchers believe that, in addition to providing information about how 180° walls interact in domain wall-based nanowire memories, this work may lead to new magneto-electronic applications using 360° domain walls, such as manipulating bits using highly localized magnetic fields in magnetic logic circuits
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